H5AN8G6NDJR-XNC vs MT40A512M16JY-075E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NDJR-XNC sa pamamagitan ng SK hynix at MT40A512M16JY-075E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-075E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5AN8G6NDJR-XNC | MT40A512M16JY-075E |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $55.68 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gb | 8 Gbit |
| Memory Organization | 512M x16 | — |
| Rate ng Data | 3200 Mbps | 2666 MT/s |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| Packhaging | FBGA-96 (13x7.5 mm) | 96-FBGA (8x14) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Organisasyon | — | 512M x 16 |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Interface | — | Parallel |
| Uri ng Pagpapasok | — | Surface Mount |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Tindminan RoHS | — | Compliant |
| Mga Karakteristika | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |