H5ANAG8NBJR-RDC vs H5ANAG6NBJR-VKC Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NBJR-RDC sa pamamagitan ng SK hynix at H5ANAG6NBJR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro H5ANAG8NBJR-RDC H5ANAG6NBJR-VKC
Brand SK hynix SK hynix
Kategorya DRAM Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
Organisasyon 2G x 8 [DATA_NEEDED: x16 organization per datasheet]
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
Interface SSTL12 DDR4, SSTL-12
Speed Grade (suffix R) DDR4-2666 class —
Packhaging 78-ball FBGA FBGA-96 (PBGA96)
Uri ng Pagpapasok Surface Mount Surface Mount
Refresh Self-refresh and auto-refresh (8K/64ms class per family datasheet) —
Bank Groups 4 (per 16Gb DDR4 family datasheet) —
Data Strobe DQS with read/write training —
Data Bus Inversion Supported (DBI) —
Latensya ng CAS [DATA_NEEDED: CAS Latency] —
Temperature na Operasyon [DATA_NEEDED: Operating Temperature Range] -40C to +95C (family grade reference)
Tindminan RoHS Compliant (lead-free PBGA per family product data) [DATA_NEEDED: RoHS status]
Katayuan ng Lifecycle Active —
Manufacturer — SK Hynix
Part Number — H5ANAG6NBJR-VKC
Memory Density — 16Gb (2GB)
Rate ng Data — 2666 Mbps (per family reference, VKC speed code)
Volte ng Pagbibigay — 1.2 V (DDR4 standard)
Auto Self-Refresh — Yes
Data Mask Function — Yes
Asynchronous Reset — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes

Mga Datasheets at Resources

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