H5ANAG8NBJR-RDC vs H5ANAG6NBJR-VKC 比較

詳細並排比較 H5ANAG8NBJR-RDC 由 SK hynix 與 H5ANAG6NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ 啟用中

規格比較

參數 H5ANAG8NBJR-RDC H5ANAG6NBJR-VKC
品牌 SK hynix SK hynix
類別 DRAM Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
組織 2G x 8 [DATA_NEEDED: x16 organization per datasheet]
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
介面 SSTL12 DDR4, SSTL-12
Speed Grade (suffix R) DDR4-2666 class —
封裝 78-ball FBGA FBGA-96 (PBGA96)
安裝類型 Surface Mount Surface Mount
Refresh Self-refresh and auto-refresh (8K/64ms class per family datasheet) —
Bank Groups 4 (per 16Gb DDR4 family datasheet) —
Data Strobe DQS with read/write training —
Data Bus Inversion Supported (DBI) —
CAS 延遲 [DATA_NEEDED: CAS Latency] —
工作溫度 [DATA_NEEDED: Operating Temperature Range] -40C to +95C (family grade reference)
RoHS 狀態 Compliant (lead-free PBGA per family product data) [DATA_NEEDED: RoHS status]
生命週期狀態 Active —
Manufacturer — SK Hynix
Part Number — H5ANAG6NBJR-VKC
Memory Density — 16Gb (2GB)
資料速率 — 2666 Mbps (per family reference, VKC speed code)
供應電壓 — 1.2 V (DDR4 standard)
Auto Self-Refresh — Yes
Data Mask Function — Yes
Asynchronous Reset — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes

資料表與資源

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