H5TC4G63CFR-PBL vs H5TC4G63MFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63CFR-PBL sa pamamagitan ng SK hynix at H5TC4G63MFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63CFR-PBL | H5TC4G63MFR-PBA |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gb (256M x 16) | — |
| Volte ng Pagbibigay | 1.35 V | — |
| Rate ng Data | 1600 Mbps (PC3L-12800) | 1866 Mbps (PC3L-14900) |
| Packhaging | 96-ball FBGA (TFBGA) | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Package Shape | RECTANGULAR | — |
| Terminal Form | BALL | — |
| Burst Length | 8 | BL8, BL4 (with burst chop) |
| Latensya ng CAS | 11, 12, 13 | — |
| Number of Banks | 8 | 8 |
| Refresh Period | 7.8 us at 85C | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Density | — | 4 Gb |
| Organisasyon | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |