H5TC4G63CFR-PBL vs H5TC4G63MFR-PBA Comparison
Detailed side-by-side comparison of H5TC4G63CFR-PBL by SK hynix and H5TC4G63MFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5TC4G63CFR-PBL
H5TC4G63CFR-PBL - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
H5TC4G63CFR-PBL β ActiveSK hynix
H5TC4G63MFR-PBA
H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
H5TC4G63MFR-PBA β ActiveSpecification Comparison
| Parameter | H5TC4G63CFR-PBL | H5TC4G63MFR-PBA |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb (256M x 16) | β |
| Supply Voltage | 1.35 V | β |
| Data Rate | 1600 Mbps (PC3L-12800) | 1866 Mbps (PC3L-14900) |
| Package | 96-ball FBGA (TFBGA) | 96-ball FBGA |
| Number of Terminals | 96 | β |
| Package Shape | RECTANGULAR | β |
| Terminal Form | BALL | β |
| Burst Length | 8 | BL8, BL4 (with burst chop) |
| CAS Latency | 11, 12, 13 | β |
| Number of Banks | 8 | 8 |
| Refresh Period | 7.8 us at 85C | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Density | β | 4 Gb |
| Organization | β | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | β | 1.35V (+0.100V/-0.067V) |
| CAS Latency (CL) | β | Programmable |
| CAS Write Latency (CWL) | β | Programmable |
| Additive Latency | β | Programmable |
| On-Die Termination (ODT) | β | Yes |
| ZQ Calibration | β | Yes |
| Write Leveling | β | Yes |
| Auto Self-Refresh | β | Yes |
| Temperature-Compensated Self-Refresh | β | Yes |
| Process Technology | β | 30nm-class |
| RoHS Compliant | β | Yes (Lead-Free & Halogen-Free) |