IAUC100N04S6L014ATMA1 vs IAUC60N04S6N031HATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC100N04S6L014ATMA1 sa pamamagitan ng Infineon at IAUC60N04S6N031HATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ NakahandaInfineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC100N04S6L014ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | IAUC (Integrated Automotive Half-Bridge) |
| Uri ng Transistor | N-Channel MOSFET | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55 °C to +175 °C (Tj) |
| Packhaging | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8-56 (5 mm x 6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Process Technology | — | OptiMOS 6 40V |
| Configuration | — | Half-Bridge (2 N-Channel MOSFETs) |
| Continuous Drain Current (I_D, Tj) | — | 60 A |
| Power Dissipation (P_D, Tc=25C) | — | 75 W |
| R_DS(on) at VGS=10V | — | 3.1 mΩ |
| Bilang ng Pin | — | 8 |
| Automotive Qualification | — | AEC-Q101 |