IAUC100N04S6L014ATMA1 vs IAUC60N04S6N031HATMA1 比較
詳細並排比較 IAUC100N04S6L014ATMA1 由 Infineon 與 IAUC60N04S6N031HATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC100N04S6L014ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | IAUC (Integrated Automotive Half-Bridge) |
| 電晶體類型 | N-Channel MOSFET | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| 工作溫度範圍 | -55C to +175C | -55 °C to +175 °C (Tj) |
| 封裝 | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8-56 (5 mm x 6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Process Technology | — | OptiMOS 6 40V |
| Configuration | — | Half-Bridge (2 N-Channel MOSFETs) |
| Continuous Drain Current (I_D, Tj) | — | 60 A |
| Power Dissipation (P_D, Tc=25C) | — | 75 W |
| R_DS(on) at VGS=10V | — | 3.1 mΩ |
| 腳位數 | — | 8 |
| Automotive Qualification | — | AEC-Q101 |