IAUC60N10S5L110ATMA1 vs IPB35N10S3L26ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC60N10S5L110ATMA1 sa pamamagitan ng Infineon at IPB35N10S3L26ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 ✓ NakahandaInfineon
IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon
IPB35N10S3L26ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC60N10S5L110ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™-5 | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| Packhaging | PG-TDSON-8-33 (TDSON-8 Single) | PG-TO263-3-2 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: min/max operating temperature] | -55C to +175C |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| Level ng MSL | 1 (per LCSC datasheet snippet) | — |
| Wala sa Halogen | Yes (per Infineon product classification) | — |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| Product Family | — | OptiMOS Power-Transistor |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tc | — | 35 A |
| Pulsed Drain Kuru-kuryente | — | 180 A |
| Power Dissipation (Pd) at Tc | — | 71 W |
| RDS(on) (typical) | — | 26.3 mOhm |
| Bilang ng Pins | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Tindminan RoHS | — | Compliant |
| Automotive Qualified | — | Yes (per Infineon product page classification) |