IAUCN04S7N037GATMA1 vs IAUA180N04S5N012AUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7N037GATMA1 sa pamamagitan ng Infineon at IAUA180N04S5N012AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ NakahandaInfineon
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN04S7N037GATMA1 | IAUA180N04S5N012AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS-5 40 V |
| Technology | Trench MOSFET, N-Channel | OptiMOS-5 Trench |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| Packhaging | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² |
| Uri ng Pagpapasok | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: junction/ambient temperature limits] | -55 °C to +175 °C (Tj) |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Part Number | — | IAUA180N04S5N012AUMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) | — | 180 A (Tc) |
| Maximum Power Dissipation (PD) | — | 125 W (Tc) |
| R_DS(on) (max) | — | 1.2 mΩ at 10 V VGS |
| Gate-Source Voltage (VGS) max | — | ±20 V |