IAUCN10S7N021ATMA1 vs BSC0906NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN10S7N021ATMA1 sa pamamagitan ng Infineon at BSC0906NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC0906NSATMA1 BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN10S7N021ATMA1 BSC0906NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology OptiMOS™ 7 (trench MOSFET) OptiMOS
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 175 A 63 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] —
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Tindminan RoHS Compliant Compliant
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 18 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg @ VGS=10V]
Hanay ng Temperature na Operasyon — -55C to +150C (junction, typical)
Bilang ng Pin — 8

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