IAUCN10S7N021ATMA1 vs BSC0906NSATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7N021ATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN10S7N021ATMA1 | BSC0906NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS™ 7 (trench MOSFET) | OptiMOS |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 175 A | 63 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS Status | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ VGS=10V] |
| Operating Temperature Range | — | -55C to +150C (junction, typical) |
| Pin Count | — | 8 |