IPB020NE7N3GATMA1 vs IPB025N10N3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB020NE7N3GATMA1 sa pamamagitan ng Infineon at IPB025N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB020NE7N3GATMA1 IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS

IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS

IPB020NE7N3GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB020NE7N3GATMA1 IPB025N10N3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IPB020NE7N3GATMA1 —
Technology OptiMOS 3 N-Channel Power MOSFET OptiMOS 3 trench MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at Tc 120 A 180 A
Power Dissipation (PD) at Tc 300 W 300 W
On-State Resistance RDS(on) 2.0 mΩ typical (per part number code) —
Packhaging PG-TO263-3 (D²PAK, TO-263AB) PG-TO263-7 (D2PAK-7) 6+Tab
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single —
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55C to +175C (junction)
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Avalanche Rated Yes (per OptiMOS 3 family datasheet) —
FET Type — N-Channel
RDS(on) Typical at VGS=10V, ID=100A — 2.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3.5 V
Input Capacitance (Ciss) — 2.58 nF
Gate Charge (Qg) Typical — [DATA_NEEDED: Qg value]
Wala sa Halogen — Yes

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita