IPB039N10N3GATMA1 vs IPB025N10N3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB039N10N3GATMA1 sa pamamagitan ng Infineon at IPB025N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPB039N10N3GATMA1 IPB025N10N3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 3 trench MOSFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 160 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25C 214 W —
On-State Resistance RDS(on) at VGS=10V (typ) 3.9 mOhm —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd typ] —
Hanay ng Temperature na Operasyon -55C to +175C -55C to +175C (junction)
Packhaging PG-TO263-7 (D2PAK-7, 6 leads + tab) PG-TO263-7 (D2PAK-7) 6+Tab
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 1 (unlimited)
RoHS / Halogen-Free Status RoHS compliant, halogen-free —
Series / Family OptiMOS 3 —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Tc — 300 W
RDS(on) Typical at VGS=10V, ID=100A — 2.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3.5 V
Input Capacitance (Ciss) — 2.58 nF
Gate Charge (Qg) Typical — [DATA_NEEDED: Qg value]
Tindminan RoHS — Compliant
Wala sa Halogen — Yes

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