IPB039N10N3GATMA1 vs IPB025N10N3GATMA1 Comparison

Detailed side-by-side comparison of IPB039N10N3GATMA1 by Infineon and IPB025N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB039N10N3GATMA1 IPB025N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.28 $3.74
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 3 trench MOSFET
Drain-to-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25C 160 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (PD) at TC=25C 214 W β€”
On-State Resistance RDS(on) at VGS=10V (typ) 3.9 mOhm β€”
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] β€”
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd typ] β€”
Operating Temperature Range -55C to +175C -55C to +175C (junction)
Package PG-TO263-7 (D2PAK-7, 6 leads + tab) PG-TO263-7 (D2PAK-7) 6+Tab
Mounting Type Surface Mount Surface Mount
MSL Level 1 1 (unlimited)
RoHS / Halogen-Free Status RoHS compliant, halogen-free β€”
Series / Family OptiMOS 3 β€”
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at Tc β€” 180 A
Power Dissipation (PD) at Tc β€” 300 W
RDS(on) Typical at VGS=10V, ID=100A β€” 2.5 mΞ©
Gate-Source Threshold Voltage (VGS(th)) β€” 3.5 V
Input Capacitance (Ciss) β€” 2.58 nF
Gate Charge (Qg) Typical β€” [DATA_NEEDED: Qg value]
RoHS Status β€” Compliant
Halogen-Free β€” Yes

Datasheets & Resources

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