IPB100N12S305ATMA1 vs IPB100N04S4H2ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB100N12S305ATMA1 sa pamamagitan ng Infineon at IPB100N04S4H2ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB100N12S305ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS Power MOSFET | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 120 V | 40 V |
| Continuous Drain Current (ID) | 100 A (Tc) | — |
| Power Dissipation (PD) | 300 W (Tc) | — |
| On-Resistance (RDS(on)) | 4.8 mOhm (typical) | — |
| Total Gate Charge (Qg) | 185 nC | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (TJ) | — |
| Packhaging / Kaso | PG-TO263-3-1 (D2PAK, surface mount) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 3 (Gate, Drain, Source) | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 qualified |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | MSL1 (up to 260 C peak reflow) | — |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS Compliance | RoHS Compliant (Green Product) | Compliant (Green Product) |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS-T2 (trench gate) |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Packhaging | — | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Level ng MSL | — | MSL1 (up to 260C peak reflow) |
| Avalanche Energy (EAS) | — | 100% avalanche tested |