IPB17N25S3100ATMA1 vs BSC027N04LSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB17N25S3100ATMA1 sa pamamagitan ng Infineon at BSC027N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC027N04LSGATMA1 - 40V 100A 2.7mΩ OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB17N25S3100ATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB17N25S3100ATMA1 | — |
| Uri ng Transistor | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V | 40 V |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 64 A | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V | — |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V | — |
| Input Capacitance (Ciss) | 1.5 nF | — |
| Output Capacitance (Coss) | 23 pF | — |
| Reverse Transfer Capacitance (Crss) | 625 pF | — |
| Power Dissipation (PD) | 107 W at Tc = 25 C | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55°C to +150°C |
| Packhaging | PG-TO263-3-2 (D2PAK-2) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Rated | 100% avalanche tested | — |
| Tindminan RoHS | Compliant (Green Product) | Compliant |
| Product Family | — | OptiMOS 3 |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 24 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.7 mΩ |
| Power Dissipation (Ta=25°C) | — | 2.5 W |
| Pwersang Pinahihigpit (TC=25°C) | — | 83 W |
| Technology | — | OptiMOS 3 (Trench) |
| Level ng MSL | — | 1 |
| Wala sa Halogen | — | Yes |