IPB60R280P7ATMA1 vs IPD80R280P7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB60R280P7ATMA1 sa pamamagitan ng Infineon at IPD80R280P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPB60R280P7ATMA1 | IPD80R280P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $0.88 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | CoolMOS P7 |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (SJ) | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Packhaging | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (2 + Tab) | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (T_j max) | — |
| Configuration | Single N-Channel | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Drain-Source Voltage (V_DS) | — | 800 V |
| Continuous Drain Current (I_D, Tc) | — | 17 A |
| R_DS(on) max at V_GS=10V | — | 280 mOhm |
| Power Dissipation (P_D, Tc) | — | 101 W |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| ESD Protection | — | Integrated (per datasheet) |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |