IPB60R280P7ATMA1 vs IPD80R280P7ATMA1 比較
詳細並排比較 IPB60R280P7ATMA1 由 Infineon 與 IPD80R280P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB60R280P7ATMA1 | IPD80R280P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $0.88 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | CoolMOS P7 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Superjunction (SJ) | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| 封裝 | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (2 + Tab) | — |
| 工作溫度範圍 | -55 °C to +150 °C (T_j max) | — |
| Configuration | Single N-Channel | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Drain-Source Voltage (V_DS) | — | 800 V |
| Continuous Drain Current (I_D, Tc) | — | 17 A |
| R_DS(on) max at V_GS=10V | — | 280 mOhm |
| Power Dissipation (P_D, Tc) | — | 101 W |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| 工作接面溫度 | — | -55C to +150C |
| ESD Protection | — | Integrated (per datasheet) |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |