IPD082N10N3GATMA1 vs BSC076N06NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD082N10N3GATMA1 sa pamamagitan ng Infineon at BSC076N06NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ NakahandaInfineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD082N10N3GATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Part Number | IPD082N10N3GATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (Trench N-Channel) | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | 2.0 V to 3.5 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) @ Tc=25°C | 125 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging / Kaso | PG-TO252-3 (DPAK), surface mount | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Tindminan RoHS | Compliant | — |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | — |
| Lead-Free | Yes | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Product Family | — | OptiMOS 3 |
| Continuous Drain Current (ID) at TC=25C | — | 50 A |
| On-Resistance RDS(on) max at VGS=10V | — | 7.6 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.4 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Packhaging | — | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| RoHS Compliance | — | Compliant |
| Wala sa Halogen | — | Yes (per Infineon product page) |