IPD50N04S408ATMA1 vs IPB35N10S3L26ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N04S408ATMA1 sa pamamagitan ng Infineon at IPB35N10S3L26ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon
IPD50N04S408ATMA1 ✓ NakahandaInfineon
IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon
IPB35N10S3L26ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50N04S408ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | OptiMOS Power-Transistor |
| Polarity | N-Channel | — |
| Mode | Enhancement-mode | — |
| Drain-Source Voltage (V DS) | 40 V | — |
| Continuous Drain Current (I D, Tc) | 50 A | — |
| Power Dissipation (P D, Tc) | 46 W | — |
| Packhaging | PG-TO252-3-313 (DPAK) | PG-TO263-3-2 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55C to +175C |
| Level ng MSL | MSL1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % Avalanche tested | — |
| Green Package (RoHS) | RoHS compliant | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | — |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | — |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tc | — | 35 A |
| Pulsed Drain Kuru-kuryente | — | 180 A |
| Power Dissipation (Pd) at Tc | — | 71 W |
| RDS(on) (typical) | — | 26.3 mOhm |
| Bilang ng Pins | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Tindminan RoHS | — | Compliant |
| Automotive Qualified | — | Yes (per Infineon product page classification) |