IPD50N04S408ATMA1 vs IPB35N10S3L26ATMA2 比較
詳細並排比較 IPD50N04S408ATMA1 由 Infineon 與 IPB35N10S3L26ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD50N04S408ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | OptiMOS Power-Transistor |
| Polarity | N-Channel | — |
| Mode | Enhancement-mode | — |
| Drain-Source Voltage (V DS) | 40 V | — |
| Continuous Drain Current (I D, Tc) | 50 A | — |
| Power Dissipation (P D, Tc) | 46 W | — |
| 封裝 | PG-TO252-3-313 (DPAK) | PG-TO263-3-2 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +175 °C | -55C to +175C |
| MSL 等級 | MSL1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % Avalanche tested | — |
| Green Package (RoHS) | RoHS compliant | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | — |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | — |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tc | — | 35 A |
| 脈衝汲極電流 | — | 180 A |
| Power Dissipation (Pd) at Tc | — | 71 W |
| RDS(on) (typical) | — | 26.3 mOhm |
| 腳位數 | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| RoHS 狀態 | — | Compliant |
| Automotive Qualified | — | Yes (per Infineon product page classification) |