IPD60R145CFD7ATMA1 vs IPB60R165CPATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R145CFD7ATMA1 sa pamamagitan ng Infineon at IPB60R165CPATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ NakahandaInfineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R145CFD7ATMA1 | IPB60R165CPATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | CoolMOS CFD7 (superjunction) | CoolMOS CP (superjunction, N-Channel) |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Packhaging | TO-252AA (DPAK) surface mount | PG-TO263-3-2 (D2PAK-2) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Temperature na Operasyon | -55C to +150C (junction) | — |
| Uri ng Pagpapasok | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Series | CoolMOS CFD7 | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | Compliant | Compliant (Pb-free lead plating) |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 21 A |
| Power Dissipation (PD, Tc=25°C) | — | 192 W |
| On-Resistance RDS(on), max (VGS=10V) | — | 165 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Total Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| Operating Temperature Range (TJ) | — | -55°C to +150°C |
| JEDEC Qualification | — | Qualified per JEDEC for target applications |
| dv/dt Ruggedness | — | Extreme dv/dt rated |
| Polarity / Channel | — | N-Channel |