IPD60R385CPATMA1 vs IPD50R380CEAUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R385CPATMA1 sa pamamagitan ng Infineon at IPD50R380CEAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon
IPD50R380CEAUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R385CPATMA1 | IPD50R380CEAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ CP (5th generation) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | 500 V |
| Drain-Source On-Resistance (RDS(on)) | 385 mΩ (typ, VGS = 10 V) | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Pulsed Drain Current (IDM) | 27 A | — |
| Power Dissipation (PD) at TC=25°C | 83 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Temperature ng Junction na Operasyon | -55 °C to +150 °C | -55C to +150C |
| Packhaging / Kaso | PG-TO252-3 (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source; tab = Drain) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Continuous Drain Current (Id) at Tc=25C | — | 14.1 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm] |
| On-State Resistance (RDS(on)) max at VGS=10V | — | 380 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Total Power Dissipation (Ptot) at Tc=25C | — | 98 W |
| Technology | — | CoolMOS CE (super-junction) |
| Channel Type | — | N-Channel |
| Packhaging | — | PG-TO252-3 (DPAK) |
| AEC-Q101 Automotive | — | Not qualified (CE variant; use CE-A for automotive) |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: MSL level] |