IPD70N10S3L12ATMA1 vs IPB35N10S3L26ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD70N10S3L12ATMA1 sa pamamagitan ng Infineon at IPB35N10S3L26ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD70N10S3L12ATMA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | OptiMOS-T |
| Uri ng Transistor | N-Channel MOSFET (Enhancement Mode) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Power Dissipation (Ptot, Tc) | 125 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 11.5 mΩ | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (junction) | — |
| Packhaging | PG-TO252-3-11 (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Drain, Gate, Source + tab) | 3 (Gate, Drain, Source) |
| Level ng MSL | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Rating | 100 % avalanche tested | — |
| Tindminan RoHS | Compliant (Green Product) | [DATA_NEEDED: RoHS status] |
| Avalanche Energy (Single Pulse) | [DATA_NEEDED: EAS value] | — |
| Channel Type | — | N-Channel |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Power Dissipation (PD) at TC | — | 71 W |
| Package Type | — | PG-TO263-3 (D2PAK-2) |
| Channel Mode | — | Enhancement |
| RDS(on) (typical per Infineon product page) | — | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | — | 80 nC |
| Maximum Drain-Source Resistance Rds | — | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | — | -55 C |
| Maximum Power Dissipation Pd | — | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 qualification status] |