IPD80R280P7ATMA1 vs IPD50N04S408ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD80R280P7ATMA1 sa pamamagitan ng Infineon at IPD50N04S408ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon
IPD50N04S408ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD80R280P7ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | OptiMOS-T2 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS P7) | — |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO252-3-313 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| ESD Protection | Integrated (per datasheet) | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | MSL1 (260 °C peak reflow) |
| Polarity | — | N-Channel |
| Mode | — | Enhancement-mode |
| Drain-Source Voltage (V DS) | — | 40 V |
| Continuous Drain Current (I D, Tc) | — | 50 A |
| Power Dissipation (P D, Tc) | — | 46 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100 % Avalanche tested |
| Green Package (RoHS) | — | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | — | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | — | [DATA_NEEDED: Q G typical] |