IPD80R280P7ATMA1 vs IPD50N04S408ATMA1 比較
詳細並排比較 IPD80R280P7ATMA1 由 Infineon 與 IPD50N04S408ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD80R280P7ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | OptiMOS-T2 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS P7) | — |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| 封裝 | PG-TO252-3 (DPAK) | PG-TO252-3-313 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作接面溫度 | -55C to +150C | — |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | MSL1 (260 °C peak reflow) |
| Polarity | — | N-Channel |
| Mode | — | Enhancement-mode |
| Drain-Source Voltage (V DS) | — | 40 V |
| Continuous Drain Current (I D, Tc) | — | 50 A |
| Power Dissipation (P D, Tc) | — | 46 W |
| 工作溫度範圍 | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100 % Avalanche tested |
| Green Package (RoHS) | — | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | — | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | — | [DATA_NEEDED: Q G typical] |