IPG20N06S4L14AATMA1 vs IAUT300N08S5N012ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPG20N06S4L14AATMA1 sa pamamagitan ng Infineon at IAUT300N08S5N012ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPG20N06S4L14AATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N06S4L14AATMA1 | — |
| FET Type | 2 N-Channel (Dual) | — |
| Drain-to-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 50 W | — |
| RDS(on) at VGS=10V | 13.7 mΩ typical | — |
| RDS(on) at VGS=4.5V | 14 mΩ typical | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Logic-Level Gate Drive | Yes | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (junction) | -55 °C to +175 °C (TJ) |
| Packhaging | PG-TDSON-8-10 (Wettable Flank) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Peak Reflow Temperature | 260°C | — |
| Avalanche Tested | 100% (per datasheet) | — |
| RoHS Compliance | Green Product (RoHS compliant) | Compliant |
| AOI Compatible | Yes (Wettable Flank) | — |
| Technology | OptiMOS™ Trench | — |
| Product Family | — | OptiMOS™-5 80 V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |