IPG20N06S4L14AATMA1 vs IAUT300N08S5N012ATMA2 比較

詳細並排比較 IPG20N06S4L14AATMA1 由 Infineon 與 IAUT300N08S5N012ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ 啟用中
Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ 啟用中

規格比較

參數 IPG20N06S4L14AATMA1 IAUT300N08S5N012ATMA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPG20N06S4L14AATMA1 —
FET Type 2 N-Channel (Dual) —
Drain-to-Source Voltage (VDS) 60 V 80 V
Continuous Drain Current (ID) 20 A (per channel) —
Power Dissipation (PD) 50 W —
RDS(on) at VGS=10V 13.7 mΩ typical —
RDS(on) at VGS=4.5V 14 mΩ typical —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] —
Logic-Level Gate Drive Yes —
工作溫度範圍 -55°C to +175°C (junction) -55 °C to +175 °C (TJ)
封裝 PG-TDSON-8-10 (Wettable Flank) PG-HSOF-8-1 (8-pin HSOF with drain tab)
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Peak Reflow Temperature 260°C —
Avalanche Tested 100% (per datasheet) —
RoHS Compliance Green Product (RoHS compliant) Compliant
AOI Compatible Yes (Wettable Flank) —
Technology OptiMOS™ Trench —
Product Family — OptiMOS™-5 80 V
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID, Tc=25°C) — 300 A
Pulsed Drain Current (IDM) — 1200 A (per datasheet, typical)
On-Resistance RDS(on) max @ VGS=10V — 1.2 mΩ
Maximum Power Dissipation (PD, Tc) — 375 W
Gate-to-Source Voltage (VGS) — ±20 V
MSL 等級 — [DATA_NEEDED: MSL level]

資料表與資源

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