IPL60R105P7AUMA1 vs IPL65R200CFD7AUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R105P7AUMA1 sa pamamagitan ng Infineon at IPL65R200CFD7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ NakahandaInfineon
IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon
IPL65R200CFD7AUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPL60R105P7AUMA1 | IPL65R200CFD7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS CFD7 |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | CoolMOS Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | 650 V |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Packhaging | PG-VSON-4 (4-pin SMD with exposed pad) | PG-VSON-4 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 14 A |
| Power Dissipation (PD, Tc) | — | 81 W |
| On-Resistance (RDS(on)) | — | 0.2 ohm at VGS=10V, ID=5.2A |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Temperature na Operasyon | — | -55C to +150C (TJ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg value] |
| Body Diode | — | Fast-recovery intrinsic |
| Gate-Source ESD Protection | — | Yes (integrated) |