IPL60R180P6AUMA1 vs IGLR70R200D2SXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R180P6AUMA1 sa pamamagitan ng Infineon at IGLR70R200D2SXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPL60R180P6AUMA1 IPL60R180P6AUMA1 - 600V CoolMOS P6 MOSFET 180mΩ | Infineon

IPL60R180P6AUMA1 - 600V CoolMOS P6 MOSFET 180mΩ | Infineon

IPL60R180P6AUMA1 ✓ Nakahanda
Infineon
IGLR70R200D2SXUMA1 IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL60R180P6AUMA1 IGLR70R200D2SXUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology CoolMOS P6 (Superjunction N-channel MOSFET) GaN HEMT (E-mode, enhancement-mode)
Drain-Source Voltage (VDS) 600 V 700 V
Gate-Source Voltage (VGS) -20 V to +20 V (max) —
Continuous Drain Current (ID) at Tc=25°C 22.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ —
Power Dissipation (Ptot) at Tc=25°C 176 W —
Hanay ng Temperature ng Junction na Operasyon -55 °C to +150 °C —
Storage Temperature Range -55 °C to +150 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value] —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V) —
Packhaging PG-VSON-4 (Thin-PAK) surface mount PG-TSON-8-8 (surface mount, ThinPAK top-cooled)
Uri ng Pagpapasok Surface Mount —
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020) —
Tindminan RoHS Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — CoolGaN G5
Channel Type — N-Channel
Continuous Drain Current (ID, Tc) — 9.3 A
Power Dissipation (PD, Tc) — 34 W
On-Resistance (RDS(on), max) — 200 mΩ
Total Gate Charge (Qg) — 1.26 nC
Output Capacitance (Coss) — 91 pF
Reverse Transfer Capacitance (Crss) — 0.21 pF
Gate Threshold Voltage (VGS(th), typ) — 1.2 V
Hanay ng Temperature na Operasyon — -40 °C to +150 °C
RoHS — Compliant

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