IPL65R070C7AUMA1 vs IPD60R280P7SAUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL65R070C7AUMA1 sa pamamagitan ng Infineon at IPD60R280P7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPL65R070C7AUMA1 IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 ✓ Nakahanda
Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL65R070C7AUMA1 IPD60R280P7SAUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series CoolMOS C7 CoolMOS P7 (7th generation, 600 V)
Technology Superjunction N-Channel MOSFET CoolMOS P7 Superjunction (SJ) N-channel
Drain-Source Voltage (VDS) 650 V 600 V
Continuous Drain Current (ID) at TC=25°C 28 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 70 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] 4 V max @ ID = 190 µA
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 169 W —
Avalanche Energy (EAS) 171 mJ —
Temperature ng Junction na Operasyon -55°C to +150°C —
Packhaging PG-VSON-4 (surface mount) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single with built-in diode —
Channel Type N-Channel —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL rating] 1
Continuous Drain Current (ID, Tc) — 12 A
Static Drain-Source On-Resistance (RDS(on)) — 280 mΩ (typical)
Gate-Source Voltage (VGS) Max — ±20 V
Total Power Dissipation (Ptot, Tc) — 53 W
Operating Junction Temperature (TJ) — -40 °C to +150 °C
Integrated ESD Protection — Yes

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