IPL65R070C7AUMA1 vs IPD60R280P7SAUMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPL65R070C7AUMA1 tarafından Infineon ve IPD60R280P7SAUMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPL65R070C7AUMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS C7 | CoolMOS P7 (7th generation, 600 V) |
| Technology | Superjunction N-Channel MOSFET | CoolMOS P7 Superjunction (SJ) N-channel |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 28 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 70 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | 4 V max @ ID = 190 µA |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 169 W | — |
| Avalanche Energy (EAS) | 171 mJ | — |
| İşletim Jant Sıcaklığı | -55°C to +150°C | — |
| Paket | PG-VSON-4 (surface mount) | PG-TO252-3 (DPAK) |
| Montaj Türü | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Channel Type | N-Channel | — |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | 1 |
| Continuous Drain Current (ID, Tc) | — | 12 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| Integrated ESD Protection | — | Yes |