IPP120N04S4-02 vs IRF3205STRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP120N04S4-02 sa pamamagitan ng Infineon at IRF3205STRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP120N04S4-02 - 40V, 120A OptiMOS-T2 N-Channel MOSFET | Infineon
IPP120N04S4-02 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPP120N04S4-02 | IRF3205STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS-T2 | — |
| FET Type | N-Channel MOSFET, Enhancement Mode | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 degC) | 120 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | 480 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.9 mOhm (DigiKey listing); 1.8 mOhm (Infineon product page) | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical V_GS(th) and V_GS range] | — |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 degC) | 158 W | — |
| Temperature ng Junction na Operasyon | -55 degC to +175 degC | — |
| Package / Mounting Type | PG-TO220-3-1 (TO-220-3, through-hole) | — |
| AEC Qualification | AEC qualified (automotive) | — |
| MSL (Moisture Sensitivity Level) | MSL1, 260 degC peak reflow | — |
| Avalanche Rating | 100% avalanche tested | — |
| RoHS / Lead-Free | RoHS compliant (Green Product), lead-free | — |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Single Pulse Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: E_AS] | — |
| Thermal Resistance Junction-to-Case (R<sub>thJC</sub>) | [DATA_NEEDED: R_thJC degC/W] | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 110 A |
| Pulsed Drain Current (Idm) | — | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | — | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | — | 200 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C (Tj) |
| Packhaging | — | TO-263-3 (D2PAK) |
| Uri ng Pagpapasok | — | Surface Mount |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant (PBF suffix) |
| Technology | — | HEXFET (advanced process) |
| Packaging | — | Tape & Reel (STRL) |