IPT004N03LATMA1 vs BSC050N04LSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPT004N03LATMA1 sa pamamagitan ng Infineon at BSC050N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPT004N03LATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on), max | [DATA_NEEDED: RDS(on) max in mΩ] | — |
| On-Resistance RDS(on), typical | 0.4 mΩ (typ) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total nC] | — |
| Power Dissipation (Ta, 1in² PCB) | 3.8 W | — |
| Pwersang Pinahihigpit (TC=25°C) | 300 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (Tj) | -55C to +150C |
| Packhaging | PG-HSOF-8-1 (TO-Leadless, source-down) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 |
| FET Type | — | N-Channel |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Technology | — | OptiMOS 3 (trench MOSFET) |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |