IPT004N03LATMA1 vs BSC050N04LSGATMA1 比較
詳細並排比較 IPT004N03LATMA1 由 Infineon 與 BSC050N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT004N03LATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on), max | [DATA_NEEDED: RDS(on) max in mΩ] | — |
| On-Resistance RDS(on), typical | 0.4 mΩ (typ) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total nC] | — |
| Power Dissipation (Ta, 1in² PCB) | 3.8 W | — |
| 功率耗散 (TC=25°C) | 300 W | — |
| 工作溫度範圍 | -55 °C to +150 °C (Tj) | -55C to +150C |
| 封裝 | PG-HSOF-8-1 (TO-Leadless, source-down) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | 1 |
| FET Type | — | N-Channel |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Technology | — | OptiMOS 3 (trench MOSFET) |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |