IPT012N08NF2SATMA1 vs IRF7854TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPT012N08NF2SATMA1 sa pamamagitan ng Infineon at IRF7854TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPT012N08NF2SATMA1 | IRF7854TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $0.48 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT012N08NF2SATMA1 | — |
| Product Family | StrongIRFET™ | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Ta | 39 A | — |
| Pulsed Drain Current (IDM) at Tc | 351 A | — |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) Max | 3.8 V | — |
| Power Dissipation (PD) at Ta | 3.8 W | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-HSOF-8-10 (HSOF) | SO-8 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Pin Count (incl. tab) | 9 pins (8+tab) | — |
| Technology | Trench MOSFET (OptiMOS-derived) | HEXFET (planar N-channel) |
| Tindminan RoHS | Compliant | — |
| Packing | Tape & Reel (T/R) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Hanay ng Temperature na Operasyon | — | -55°C to +150°C (TJ) |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |