IPT012N08NF2SATMA1 vs IRF7854TRPBF Comparison
Detailed side-by-side comparison of IPT012N08NF2SATMA1 by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT012N08NF2SATMA1
IPT012N08NF2SATMA1 - 80V, 1.2mΞ© N-Channel MOSFET | Infineon
IPT012N08NF2SATMA1 β Active
Specification Comparison
| Parameter | IPT012N08NF2SATMA1 | IRF7854TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.74 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPT012N08NF2SATMA1 | β |
| Product Family | StrongIRFETβ’ | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID) at Ta | 39 A | β |
| Pulsed Drain Current (IDM) at Tc | 351 A | β |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.2 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) Max | 3.8 V | β |
| Power Dissipation (PD) at Ta | 3.8 W | β |
| Power Dissipation (PD) at Tc | 300 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HSOF-8-10 (HSOF) | SO-8 |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count (incl. tab) | 9 pins (8+tab) | β |
| Technology | Trench MOSFET (OptiMOS-derived) | HEXFET (planar N-channel) |
| RoHS Status | Compliant | β |
| Packing | Tape & Reel (T/R) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 10 A |
| Power Dissipation (PD) at Ta=25Β°C | β | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | β | 13.4 mΞ© |
| Gate-Source Threshold Voltage VGS(th) max | β | 4.9 V |
| Total Gate Charge Qg | β | 27 nC |
| Operating Temperature Range | β | -55Β°C to +150Β°C (TJ) |
| Lead-Free / RoHS | β | Yes (PBF suffix, lead-free) |
| Qualification | β | JEDEC industrial, Normal level |
| Solder Process | β | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | β | 10 V |