IPT65R040CFD7XTMA1 vs IPW60R037P7XKSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPT65R040CFD7XTMA1 sa pamamagitan ng Infineon at IPW60R037P7XKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPT65R040CFD7XTMA1 IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon

IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon

IPT65R040CFD7XTMA1 ✓ Nakahanda
Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPT65R040CFD7XTMA1 IPW60R037P7XKSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Family CoolMOS CFD7 —
Technology Superjunction N-channel MOSFET CoolMOS Superjunction (SJ)
Drain-Source Voltage (V(BR)DSS) 650 V —
Maximum On-State Resistance RDS(on) max 40 mOhm at VGS=10 V —
Typical On-State Resistance RDS(on) typ 34 mOhm —
Continuous Drain Current ID (TC=25C) 63 A —
Gate Threshold Voltage VGS(th) 3.5 V typical [DATA_NEEDED: full min/max] —
Gate-Source Voltage VGS max [DATA_NEEDED: +/-20 V typical for CFD7] —
Packhaging PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) PG-TO247-3 (TO-247-3, through-hole)
Uri ng Pagpapasok Surface Mount Through Hole
Topology Suitability LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC —
Body Diode Integrated fast body diode (low Qrr, hard-commutation rugged) —
Hanay ng Temperature na Operasyon -55C to +150C [DATA_NEEDED: confirm junction range] —
RoHS Compliance Compliant —
Level ng MSL [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] —
Automotive Qualification Industrial grade (AEC-Q101 variants exist separately) —
Series — CoolMOS™ P7
Uri ng Transistor — N-Channel MOSFET (Superjunction)
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, Tc=25 °C) — 76 A
On-Resistance (R_DS(on), max, V_GS=10 V) — 37 mΩ
Power Dissipation (P_D, Tc=25 °C) — 255 W
Gate Threshold Voltage (V_GS(th), typ) — 3.5 V
Temperature ng Junction na Operasyon — -55 °C to +150 °C
Orderable Part Number Suffix — XKSA1 (tube packaging, industrial)
Tindminan RoHS — Compliant
Avalanche Rated — Yes

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