IPW60R080P7XKSA1 vs IPA60R190C6XKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPW60R080P7XKSA1 sa pamamagitan ng Infineon at IPA60R190C6XKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon
IPW60R080P7XKSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPW60R080P7XKSA1 | IPA60R190C6XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | CoolMOS C6 |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 37 A | — |
| Power Dissipation (PD, Tc) | 129 W | — |
| RDS(on) (typ) | 69 mΩ at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V (typ, per datasheet family) | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg typ] |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf value] | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | -55C to +150C |
| Packhaging | PG-TO247-3 (TO-247, 3-pin through-hole) | PG-TO220-FP (TO-220 FullPAK, 3+tab) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Packaging | Tube (XKSA1 ordering suffix) | — |
| Tindminan RoHS | Compliant | Compliant |
| Continuous Drain Current (ID, Tc=25C) | — | 20.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25C) | — | 34 W |
| On-State Resistance (RDS(on)) | — | 190 mOhm at VGS=10V, ID=9.5A |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Tab Isolation | — | Fully isolated (4 kV) |
| Lead Free | — | Yes |