IR2109SPBF vs 2ED2304S06FXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2109SPBF sa pamamagitan ng Infineon at 2ED2304S06FXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2ED2304S06FXUMA1 2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IR2109SPBF 2ED2304S06FXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Configuration Half-Bridge Half-Bridge (High-Side + Low-Side)
Number of Drivers 2 (high-side + low-side) —
High-Side Voltage Tolerance 600 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typical) 0.2 A —
Sink Current (typical) 0.35 A —
Turn-On Propagation Delay 150 ns —
Turn-Off Propagation Delay 150 ns —
Oras ng Pagtaas 200 ns —
Time ng Pagbaba 50 ns —
Quiescent VCC Current 1 mA —
Input Logic Compatibility 3.3 V / 5 V CMOS / TTL 3.3 V CMOS / LSTTL (Schmitt-trigger)
Undervoltage Lockout Yes (VCC) —
Bootstrap Diode Integrated Integrated (BSD)
Temperature ng Junction na Operasyon -40 C to +150 C —
Packhaging SOIC-8 PG-DSO-8-910 (DSO-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Technology — Infineon thin-film SOI
Blocking Voltage (High-Side) — 650 V
Source Current (typ.) — 0.36 A
Sink Current (typ.) — 0.7 A
VCC Supply Range — 10 V to 17 V
Undervoltage Lockout (UVLO) — Yes (VCC and VB-VS)
Interlock / Anti-Shoot-Through — Built-in
Propagation Delay (typ.) — 200 ns
Hanay ng Temperature na Operasyon — -40C to +125C
Level ng MSL — 2

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