IR2109SPBF vs 2EDL5013U2DXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2109SPBF sa pamamagitan ng Infineon at 2EDL5013U2DXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2EDL5013U2DXTMA1 2EDL5013U2DXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL5013U2DXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL5013U2DXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IR2109SPBF 2EDL5013U2DXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Configuration Half-Bridge High-Side, Low-Side (Half-Bridge)
Number of Drivers 2 (high-side + low-side) —
High-Side Voltage Tolerance 600 V —
Supply Voltage (VCC) 10 V to 20 V 4.5 V to 5.5 V
Source Current (typical) 0.2 A —
Sink Current (typical) 0.35 A —
Turn-On Propagation Delay 150 ns —
Turn-Off Propagation Delay 150 ns —
Oras ng Pagtaas 200 ns —
Time ng Pagbaba 50 ns —
Quiescent VCC Current 1 mA —
Input Logic Compatibility 3.3 V / 5 V CMOS / TTL —
Undervoltage Lockout Yes (VCC) —
Bootstrap Diode Integrated Integrated
Temperature ng Junction na Operasyon -40 C to +150 C —
Packhaging SOIC-8 PG-TSNP-12-5 (12-pin, 5x5 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Input Logic — Non-Inverting
Number of Channels — 2
Peak Source Current — 3 A
Peak Sink Current — 3 A
Output Kumpigurasyon — Non-Inverting
Bootstrap Voltage Rating — 120 V max
Rise Time (typ.) — 4.4 ns
Fall Time (typ.) — 3.5 ns
Miller Clamp — 7 A active Miller clamp
UVLO — VCC and VBS under-voltage lockout
Hanay ng Temperature na Operasyon — -40C to +125C

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