IR2304SPBF vs IR2109SPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2304SPBF sa pamamagitan ng Infineon at IR2109SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IR2304SPBF IR2109SPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Half-Bridge Gate Driver IC —
Configuration High and Low Side, Independent Channels —
Bilang ng Outputs 2 —
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V 3.3 V / 5 V CMOS / TTL
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
Packhaging 8-Pin SOIC (SO-8 N) SOIC-8
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40 C to +125 C —
Technology HVIC + Latch-Immune CMOS, Monolithic —
Tindminan RoHS Compliant (Pb-free) Compliant
Driver Configuration — Half-Bridge
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
Oras ng Pagtaas — 200 ns
Time ng Pagbaba — 50 ns
Quiescent VCC Current — 1 mA
Undervoltage Lockout — Yes (VCC)
Bootstrap Diode — Integrated
Temperature ng Junction na Operasyon — -40 C to +150 C

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