IR2304SPBF vs IR2109SPBF 比較

詳細並排比較 IR2304SPBF 由 Infineon 與 IR2109SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR2304SPBF IR2109SPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
Configuration High and Low Side, Independent Channels —
輸出數量 2 —
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V 3.3 V / 5 V CMOS / TTL
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
封裝 8-Pin SOIC (SO-8 N) SOIC-8
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40 C to +125 C —
Technology HVIC + Latch-Immune CMOS, Monolithic —
RoHS 狀態 Compliant (Pb-free) Compliant
Driver Configuration — Half-Bridge
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
上升時間 — 200 ns
下降時間 — 50 ns
Quiescent VCC Current — 1 mA
Undervoltage Lockout — Yes (VCC)
Bootstrap Diode — Integrated
工作接面溫度 — -40 C to +150 C

資料表與資源

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