IRF520NPBF vs IRF5210PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF520NPBF sa pamamagitan ng Infineon at IRF5210PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF520NPBF IRF5210PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock — In Stock
Presyo ng Yunit (USD) — $0.82
Manufacturer Infineon Technologies —
Series HEXFET —
FET Type N-Channel —
Drain-to-Source Voltage (V_DSS) 100 V —
Continuous Drain Current (I_D) at Tc 9.7 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current value] —
Gate-to-Source Voltage (V_GS) max ±20 V —
R_DS(on) max at V_GS=10V 200 mOhm —
Total Gate Charge (Q_g) 16.7 nC —
Power Dissipation (P_D) at Tc 48 W —
Hanay ng Temperature na Operasyon -55C to +175C -55 C to +175 C (junction)
Packhaging TO-220AB (through-hole) TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Level ng MSL 1 (unlimited) —
Tindminan RoHS Compliant (Pb-free) —
Lead-Free Finish Yes (PBF suffix) —
Technology HEXFET (vertical DMOS) HEXFET (Fifth Generation)
Uri ng Transistor — P-Channel MOSFET
Drain-Source Voltage (Vds) — -100 V
Continuous Drain Current (Id) at Tc — -40 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current value]
Gate-Source Threshold Voltage (Vgs(th)) — -2 V to -4 V (typical -2 V)
On-Resistance Rds(on) at Vgs=-10V — 60 milliohms
Total Gate Charge (Qg) — 120 nC
Power Dissipation (Pd) at Tc — 200 W
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Tab Connection — Electrically tied to Drain
Pin Configuration — Gate / Drain (tab) / Source (G-D-S, front view)

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