IRF520NPBF vs IRF5210PBF 比較
詳細並排比較 IRF520NPBF 由 Infineon 與 IRF5210PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF520NPBF | IRF5210PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| 工作溫度範圍 | -55C to +175C | -55 C to +175 C (junction) |
| 封裝 | TO-220AB (through-hole) | TO-220AB (through-hole) |
| 安裝類型 | Through Hole | Through Hole |
| MSL 等級 | 1 (unlimited) | — |
| RoHS 狀態 | Compliant (Pb-free) | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | HEXFET (Fifth Generation) |
| 電晶體類型 | — | P-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | -100 V |
| Continuous Drain Current (Id) at Tc | — | -40 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Threshold Voltage (Vgs(th)) | — | -2 V to -4 V (typical -2 V) |
| On-Resistance Rds(on) at Vgs=-10V | — | 60 milliohms |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (Pd) at Tc | — | 200 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Tab Connection | — | Electrically tied to Drain |
| Pin Configuration | — | Gate / Drain (tab) / Source (G-D-S, front view) |