IRF5305STRRPBF vs IRF4905STRRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF5305STRRPBF sa pamamagitan ng Infineon at IRF4905STRRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF5305STRRPBF | IRF4905STRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | P-Channel MOSFET | — |
| Technology | HEXFET (Advanced Process) | HEXFET (Advanced Process) |
| Drain-to-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max @ VGS=-10V | 60 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | -2.0 V to -4.0 V |
| Power Dissipation (TC) | 110 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | -55 C to +175 C |
| Packhaging | D2PAK (TO-263) Surface Mount | D2PAK (TO-263-3) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) | — |
| Packaging | Tape & Reel (TR) | — |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -74 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 20 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (PD) at TC=25C | — | 170 W |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |