IRF640NSTRLPBF vs IRFZ48NSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF640NSTRLPBF sa pamamagitan ng Infineon at IRFZ48NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF640NSTRLPBF IRF640NSTRLPBF - 200V 18A N-Channel HEXFET MOSFET | Infineon

IRF640NSTRLPBF - 200V 18A N-Channel HEXFET MOSFET | Infineon

IRF640NSTRLPBF ✓ Nakahanda
Infineon
IRFZ48NSTRLPBF IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF640NSTRLPBF IRFZ48NSTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel Power MOSFET
Technology HEXFET (5th generation, trench MOSFET) —
Drain-to-Source Voltage (VDS) 200 V 55 V
Continuous Drain Current (ID, Tc=25C) 18 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, Tc=25C) 150 W —
On-Resistance (RDS(on)) at VGS=10V 0.15 ohm —
Gate-to-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] 2.0 V to 4.0 V
Total Gate Charge (Qg) 44.7 nC 54 nC
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Hanay ng Temperature ng Junction na Operasyon -55C to +175C —
Packhaging D2PAK (TO-263AB), surface mount, 3-pin (2+tab) D2PAK (TO-263) Surface Mount
Uri ng Pagpapasok Surface Mount (Tape and Reel) Surface Mount
Lead-Free (PbF) Yes —
Tindminan RoHS Compliant Compliant
Continuous Drain Current (ID) @ Tc=25C — 64 A
Static Drain-to-Source On-Resistance (Rds(on)) — 14 mΩ at VGS = 10 V
Gate-to-Source Voltage (VGS) max — ±20 V
Power Dissipation (Pd) @ Tc=25C — 130 W
Power Dissipation (Pd) @ Ta=25C on FR-4 — 3.8 W
Temperature ng Junction na Operasyon — -55C to +175C
Packaging — Tape & Reel (13-inch reel, TRL)
Lead Finish — Lead-free (PBF) matte tin
Technology Family — HEXFET advanced process technology

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