IRF7205TRPBF vs BSL207SPH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7205TRPBF sa pamamagitan ng Infineon at BSL207SPH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF7205TRPBF BSL207SPH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel MOSFET P-Channel
Technology IR HEXFET (4th generation) MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25°C -4.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ —
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ —
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V —
Total Gate Charge Qg 27 nC —
Pwersang Pinahihigpit (TC=25°C) 2.5 W —
Temperature ng Junction na Operasyon -55 °C to +150 °C —
Packhaging SO-8 (8-SO) TSOP-6 (PG-TSOP6-6)
Uri ng Pagpapasok Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant —
Packaging Tape & Reel (TR suffix) —
Drain to Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) at 25C — 6 A (Ta)
Power Dissipation (PD) — 2 W (Ta)
RDS(on) Max @ VGS = -4.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-4.5V]
RDS(on) Max @ VGS = -2.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-2.5V]
Drive Voltage (Max RDS(on), Min RDS(on)) — 2.5 V, 4.5 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Temperature na Operasyon — -55C to +150C
Series — OptiMOS™
Automotive Qualification — AEC-Q101
Tindminan RoHS — Compliant
Bilang ng Pin — 6

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