IRF7313TRPBF vs IRF7907TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7313TRPBF sa pamamagitan ng Infineon at IRF7907TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7313TRPBF IRF7907TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon (formerly International Rectifier) —
Part Number IRF7313TRPBF —
Technology IR MOSFET Generation V (HEXFET Fifth Generation) IR MOSFET (Infineon hexfet-style trench)
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V —
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) —
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55 C to +150 C
Packhaging 8-pin SOIC (SO-8) surface mount 8-SOIC (SO-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
Level ng MSL 1 —
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) Max — 9.1 A per channel at 25 C
Pulsed Drain Current (IDM) Max — 11 A
On-Resistance (RDS(on)) Max — 11.8 mOhm at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 1.35 V (typ)
Total Power Dissipation (PD) Max — 2 W
Lead-Free Status — Yes (PBF suffix)
Packaging — Tape & Reel (TR)
Tindminan RoHS — Compliant
Channel Polarity — N-Channel (both)

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