IRF7319TRPBF vs IRFR9120NTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF7319TRPBF sa pamamagitan ng Infineon at IRFR9120NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF7319TRPBF | IRFR9120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Type | Dual MOSFET Array (N-channel + P-channel) | — |
| Technology | IR MOSFET / Fifth Generation HEXFET | HEXFET fifth-generation IR MOSFET |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current N-channel (ID) | 6.5 A | — |
| Continuous Drain Current P-channel (ID) | 4.9 A | — |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) | — |
| RDS(on) Max P-channel | [DATA_NEEDED: P-channel RDS(on) max] | — |
| Total Power Dissipation (PD) | 2 W | — |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) | — |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) | — |
| Package Type | 8-SOIC (SO-8) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) | — |
| Packaging | Tape & Reel (TR suffix) | — |
| Configuration | N-Channel + P-Channel (complementary half-bridge) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC=25C | — | -6.6 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max at VGS=-10V | — | 480 milliohm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) | — | 18 nC (typical) |
| Continuous Power Dissipation (PD) at TC=25C | — | 40 W |
| Hanay ng Temperature ng Junction na Operasyon | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Packhaging | — | TO-252AA (DPAK), surface mount |
| Level ng MSL | — | 1 (unlimited floor life) |
| Lead Finish / Plating | — | Pb-free (PBF suffix), Matte Tin |
| Tindminan RoHS | — | Compliant |
| Moisture Sensitivity | — | MSL1 per JEDEC J-STD-020 |